IndiumV3, Main, Repository, bibRecord, 00E890

Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device

Identifieur interne : 00E890 ( Main/Repository ); précédent : 00E889; suivant : 00E891

Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device

Auteurs : RBID : Pascal:02-0573589

Descripteurs français

Pascal (Inist)
- Densité porteur charge, Recombinaison Auger, Rayonnement laser, Recombinaison non radiative, Photoluminescence, Conversion fréquence, Dépendance température, Effet Hall, Porteur charge, Bande valence, Bande conduction, Durée vie porteur charge, Indium arséniure, Semiconducteur, Gallium antimoniure, Aluminium antimoniure, Réseau cubique, Composé binaire, As In, InAs, Ga Sb, GaSb, 7350G, 7855, Al Sb, AlSb.

English descriptors

KwdEn :
- Aluminium antimonides, Auger recombination, Binary compounds, Carrier density, Carrier lifetime, Charge carriers, Conduction bands, Cubic lattices, Frequency conversion, Gallium antimonides, Hall effect, Indium arsenides, Laser radiation, Non radiative recombination, Photoluminescence, Semiconductor materials, Temperature dependence, Valence bands.

Abstract

We report on the temperature and carrier density dependence of non-radiative recombination processes in an InAs/GaSb/InAs type-II W-laser emitting at 3.4 μm. The measurements were performed with a sub-picosecond photoluminescence upconversion set-up in a temperature range between 10 K and 300 K and with initial excited carrier densities in the range between 2.96 x 10¹⁸ cm^-3 and 4.44 × 10¹⁹ cm^-3. The excellent growth quality of the device is indicated by a Shockley-Read-Hall coefficient of 2.2 x 10⁸ s^-1 at 10 K and 1.1 x 10⁸ s^-1 at 300 K. The cubic Auger recombination (AR) coefficient decreases in a characteristic manner with increasing initial excited carrier density. From a convergence equation, we obtained a cubic AR coefficient C⁰₃ of 1.2 × 10^-28 cm⁶ s^-1 for low carrier densities at 200 K. For low temperatures, due to degenerate carrier population of valence and conduction bands, a sublinear increase of the reciprocal lifetime versus carrier density is measured. With rising temperature the sublinear increase becomes linear and at 300 K a quadratic AR coefficient C⁰₂ of 1.73 x 10^-11 cm³ s^-1 was determined.

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Pascal:02-0573589

Le document en format XML

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<author><name sortKey="Vogelgesang, B" uniqKey="Vogelgesang B">B. Vogelgesang</name>
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<author><name sortKey="Fouckhardt, H" uniqKey="Fouckhardt H">H. Fouckhardt</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research Group ' Integrierte Optoelektronik und Mikrooptik', Department of Physics, University of Kaiserslautern, Erwin-Schrödinger-Strasse</s1>
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<publicationStmt><idno type="inist">02-0573589</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 02-0573589 INIST</idno>
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<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term>
<term>Auger recombination</term>
<term>Binary compounds</term>
<term>Carrier density</term>
<term>Carrier lifetime</term>
<term>Charge carriers</term>
<term>Conduction bands</term>
<term>Cubic lattices</term>
<term>Frequency conversion</term>
<term>Gallium antimonides</term>
<term>Hall effect</term>
<term>Indium arsenides</term>
<term>Laser radiation</term>
<term>Non radiative recombination</term>
<term>Photoluminescence</term>
<term>Semiconductor materials</term>
<term>Temperature dependence</term>
<term>Valence bands</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Densité porteur charge</term>
<term>Recombinaison Auger</term>
<term>Rayonnement laser</term>
<term>Recombinaison non radiative</term>
<term>Photoluminescence</term>
<term>Conversion fréquence</term>
<term>Dépendance température</term>
<term>Effet Hall</term>
<term>Porteur charge</term>
<term>Bande valence</term>
<term>Bande conduction</term>
<term>Durée vie porteur charge</term>
<term>Indium arséniure</term>
<term>Semiconducteur</term>
<term>Gallium antimoniure</term>
<term>Aluminium antimoniure</term>
<term>Réseau cubique</term>
<term>Composé binaire</term>
<term>As In</term>
<term>InAs</term>
<term>Ga Sb</term>
<term>GaSb</term>
<term>7350G</term>
<term>7855</term>
<term>Al Sb</term>
<term>AlSb</term>
</keywords>
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<front><div type="abstract" xml:lang="en">We report on the temperature and carrier density dependence of non-radiative recombination processes in an InAs/GaSb/InAs type-II W-laser emitting at 3.4 μm. The measurements were performed with a sub-picosecond photoluminescence upconversion set-up in a temperature range between 10 K and 300 K and with initial excited carrier densities in the range between 2.96 x 10<sup>18</sup>
 cm<sup>-3</sup>
 and 4.44 × 10<sup>19</sup>
 cm<sup>-3</sup>
. The excellent growth quality of the device is indicated by a Shockley-Read-Hall coefficient of 2.2 x 10<sup>8</sup>
 s<sup>-1</sup>
 at 10 K and 1.1 x 10<sup>8</sup>
 s<sup>-1</sup>
 at 300 K. The cubic Auger recombination (AR) coefficient decreases in a characteristic manner with increasing initial excited carrier density. From a convergence equation, we obtained a cubic AR coefficient C<sup>0</sup>
<sub>3</sub>
 of 1.2 × 10<sup>-28</sup>
 cm<sup>6</sup>
 s<sup>-1</sup>
 for low carrier densities at 200 K. For low temperatures, due to degenerate carrier population of valence and conduction bands, a sublinear increase of the reciprocal lifetime versus carrier density is measured. With rising temperature the sublinear increase becomes linear and at 300 K a quadratic AR coefficient C<sup>0</sup>
<sub>2</sub>
 of 1.73 x 10<sup>-11</sup>
 cm<sup>3</sup>
 s<sup>-1</sup>
 was determined.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device</s1>
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<fA11 i1="01" i2="1"><s1>DRUMM (J. O.)</s1>
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<fA11 i1="02" i2="1"><s1>VOGELGESANG (B.)</s1>
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<fA11 i1="03" i2="1"><s1>HOFFMANN (G.)</s1>
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<fA14 i1="01"><s1>Research Group ' Integrierte Optoelektronik und Mikrooptik', Department of Physics, University of Kaiserslautern, Erwin-Schrödinger-Strasse</s1>
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<fC01 i1="01" l="ENG"><s0>We report on the temperature and carrier density dependence of non-radiative recombination processes in an InAs/GaSb/InAs type-II W-laser emitting at 3.4 μm. The measurements were performed with a sub-picosecond photoluminescence upconversion set-up in a temperature range between 10 K and 300 K and with initial excited carrier densities in the range between 2.96 x 10<sup>18</sup>
 cm<sup>-3</sup>
 and 4.44 × 10<sup>19</sup>
 cm<sup>-3</sup>
. The excellent growth quality of the device is indicated by a Shockley-Read-Hall coefficient of 2.2 x 10<sup>8</sup>
 s<sup>-1</sup>
 at 10 K and 1.1 x 10<sup>8</sup>
 s<sup>-1</sup>
 at 300 K. The cubic Auger recombination (AR) coefficient decreases in a characteristic manner with increasing initial excited carrier density. From a convergence equation, we obtained a cubic AR coefficient C<sup>0</sup>
<sub>3</sub>
 of 1.2 × 10<sup>-28</sup>
 cm<sup>6</sup>
 s<sup>-1</sup>
 for low carrier densities at 200 K. For low temperatures, due to degenerate carrier population of valence and conduction bands, a sublinear increase of the reciprocal lifetime versus carrier density is measured. With rising temperature the sublinear increase becomes linear and at 300 K a quadratic AR coefficient C<sup>0</sup>
<sub>2</sub>
 of 1.73 x 10<sup>-11</sup>
 cm<sup>3</sup>
 s<sup>-1</sup>
 was determined.</s0>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Bande valence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Valence bands</s0>
<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
</fC03>
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<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>15</s5>
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<s2>NK</s2>
<s5>15</s5>
</fC03>
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<s5>16</s5>
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<s5>16</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>Gallium antimoniure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
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<s2>NK</s2>
<s5>17</s5>
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<s2>NK</s2>
<s5>18</s5>
</fC03>
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<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Réseau cubique</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>19</s5>
</fC03>
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<s5>20</s5>
</fC03>
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<s5>20</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Ga Sb</s0>
<s4>INC</s4>
<s5>54</s5>
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<s5>55</s5>
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<s2>PAC</s2>
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<s5>56</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>7855</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
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<s4>INC</s4>
<s5>92</s5>
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<s4>INC</s4>
<s5>93</s5>
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<s5>48</s5>
</fC07>
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<s5>48</s5>
</fC07>
<fN21><s1>336</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
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   |texte=   Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device
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Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device

Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device

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